A new approach to N-polar n-GaN surface treatment for room-temperature transparent ohmic contact formation

Wójcicka, A.

Fogarassy, Zsolt

Kravchuk, T.

Kamińska, E.

Perlin, P.

Grzanka, S.

Borysiewicz, M.A.

2025

QC Physics / fizika

QC173.4 Material science / anyagtudomány

QD Chemistry / kémia

In this work, we propose a new approach to obtain as-deposited low-resistivity transparent ZnO:Al (AZO) ohmic contacts to n-GaN N-face by first modifying the GaN surface by depositing a standard Ti/Al/TiN/Au contact, forming it at 750 ◦C, and then removing the metallization by chemical etching. To identify the mechanisms responsible for the contact’s ohmicity, the GaN interface was examined by (scanning) transmission electron microscopy, as well as time-of-flight secondary ion mass spectrometry. We identified changes formed at the interface in the form of AlN pits growing epitaxially on GaN, a thin inhomogeneous AlN + Ti layer, and argue that this results in the formation of a highly doped subsurface GaN layer due to nitrogen diffusion which modifies the n-GaN surface in a way enabling to obtain an as-deposited low-resistive transparent AZO contact on it with current–voltage characteristics similar to a standard metallic contact formed at 750◦C.

angol

Article

PeerReviewed

info:eu-repo/semantics/article

text

https://real.mtak.hu/211274/1/1-s2.0-S136980012401031X-main.pdf

Wójcicka, A. and Fogarassy, Zsolt and Kravchuk, T. and Kamińska, E. and Perlin, P. and Grzanka, S. and Borysiewicz, M.A. (2025) A new approach to N-polar n-GaN surface treatment for room-temperature transparent ohmic contact formation. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 187. No.-109135. ISSN 1369-8001

https://real.mtak.hu/211274/

https://doi.org/10.1016/j.mssp.2024.109135

MTMT:35627921 10.1016/j.mssp.2024.109135