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2D graphitic-like gallium nitride and other structural selectivity in confinement at the graphene/SiC interface |
Tartalom: | http://real.mtak.hu/176131/ |
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Archívum: | REAL |
Gyűjtemény: |
Status = Published
Subject = Q Science / természettudomány: QC Physics / fizika Type = Article |
Cím: |
2D graphitic-like gallium nitride and other structural selectivity in confinement at the graphene/SiC interface
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Létrehozó: |
Sfuncia, Gianfranco
Nicotra, Giuseppe
Giannazzo, Filippo
Pécz, Béla
Gueorguiev, Gueorgui Kostov
Kakanakova-Georgieva, Anelia
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Dátum: |
2023
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Téma: |
QC Physics / fizika
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Tartalmi leírás: |
An atomic resolution image of an intercalated structure at a graphene/SiC interface along the growth direction which is determined as a buckled GaN monolayer at the immediate interface with an underlying SiC substrate and ultrathin Ga 2 O 3 on top. | Beyond the predictions routinely achievable by first-principles calculations and using metal–organic
chemical vapor deposition (MOCVD), we report a GaN monolayer in a buckled geometry obtained in
confinement at the graphene/SiC interface. Conductive atomic force microscopy (C-AFM) was used to
investigate vertical current injection across the graphene/SiC interface and to establish the uniformity of
the intercalated regions. Scanning transmission electron microscopy (S/TEM) was used for atomic
resolution imaging and spectroscopy along the growth direction. The experimentally obtained value of the
buckling parameter, 1.01 ± 0.11 Å, adds to the existing knowledge of buckled GaN monolayers, which is
based solely on predictive first-principles calculations. Our study reveals a discontinuity in the anticipated
stacking sequence attributed to a few-layer graphitic-like GaN structure. Instead, we identify an atomic
order suggestive of ultrathin gallium oxide Ga2O3, whose formation is apparently mediated by dissociative
adsorption of oxygen onto the GaN monolayer.
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Nyelv: |
angol
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Típus: |
Article
PeerReviewed
info:eu-repo/semantics/article
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Formátum: |
text
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Azonosító: |
Sfuncia, Gianfranco and Nicotra, Giuseppe and Giannazzo, Filippo and Pécz, Béla and Gueorguiev, Gueorgui Kostov and Kakanakova-Georgieva, Anelia (2023) 2D graphitic-like gallium nitride and other structural selectivity in confinement at the graphene/SiC interface. CRYSTENGCOMM. ISSN 1466-8033
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Kapcsolat: |
MTMT:34176366 10.1039/D3CE00515A
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Létrehozó: |
cc_by
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