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A fast operation of nanometer-scale metallic memristors : highly transparent conductance channels in Ag2S devices |
Tartalom: | http://pubs.rsc.org/en/journals/journalissues/nr#!recentarticles&all |
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Archívum: | REAL |
Gyűjtemény: |
Status = Published
Subject = Q Science / természettudomány: QC Physics / fizika: QC06 Physics of condensed matter / szilárdtestfizika Type = Article |
Cím: |
A fast operation of nanometer-scale metallic
memristors : highly transparent conductance
channels in Ag2S devices
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Létrehozó: |
Geresdi, Attila
Csontos, Miklós
Gubicza, Ágnes
Halbritter, András
Mihály, György
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Dátum: |
2013-12-06
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Téma: |
QC06 Physics of condensed matter / szilárdtestfizika
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Tartalmi leírás: |
The nonlinear transport properties of nanometer-scale junctions
formed between an inert metallic tip and an Ag film covered by a thin
Ag2S layer are investigated. Suitably prepared samples exhibit memristive
behavior with technologically optimal ON and OFF state resistances
yielding to resistive switching on the nanosecond time scale.
Utilizing point contact Andreev reflection spectroscopy, we studied
the nature of electron transport in the active volume of memristive
junctions showing that both theON and OFF states correspond to truly
nanometer-scale, highly transparent metallic channels. Our results
demonstrate the merits of Ag2S nanojunctions as nanometer-scale
memory cells which can be switched by nanosecond voltage pulses.
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Típus: |
Article
NonPeerReviewed
info:eu-repo/semantics/article
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Formátum: |
text
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Azonosító: |
Geresdi, Attila and Csontos, Miklós and Gubicza, Ágnes and Halbritter, András and Mihály, György (2013) A fast operation of nanometer-scale metallic memristors : highly transparent conductance channels in Ag2S devices. NANOSCALE, 6. pp. 2613-2617. ISSN 2040-3364
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Kapcsolat: |
293797
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